APA (7th ed.) Citation

Sheliuk, I. O., Denysiuk, R. O., Malanych, G. P., Tomashyk, V. M., Boichuk, I. D., Chaika, M. V., & Melnyk, O. F. (2025). Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques. Physics & Chemistry of Solid State, 26(4), 760. https://doi.org/10.15330/pcss.26.4.760-765

Chicago Style (17th ed.) Citation

Sheliuk, I. O., R. O. Denysiuk, G. P. Malanych, V. M. Tomashyk, I. D. Boichuk, M. V. Chaika, and O. F. Melnyk. "Compensation Effect in the Kinetics of Chemical Treatment of GaAs, InAs, GaSb, and InSb Using Bromine-releasing Etching Compositions Based on H2O2–HBr Solutions for the Development of Effective Chemical Polishing Techniques." Physics & Chemistry of Solid State 26, no. 4 (2025): 760. https://doi.org/10.15330/pcss.26.4.760-765.

MLA (9th ed.) Citation

Sheliuk, I. O., et al. "Compensation Effect in the Kinetics of Chemical Treatment of GaAs, InAs, GaSb, and InSb Using Bromine-releasing Etching Compositions Based on H2O2–HBr Solutions for the Development of Effective Chemical Polishing Techniques." Physics & Chemistry of Solid State, vol. 26, no. 4, 2025, p. 760, https://doi.org/10.15330/pcss.26.4.760-765.