Bibliographic Details
| Title: |
Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques. |
| Authors: |
Sheliuk, I. O.1, irusik_shel@ukr.net, Denysiuk, R. O.2, denisuk@zu.edu.ua, Malanych, G. P.3, galya.malanich@gmail.com, Tomashyk, V. M.3, Boichuk, I. D.1, Chaika, M. V.2, Melnyk, O. F.1 |
| Source: |
Physics & Chemistry of Solid State; 2025, Vol. 26 Issue 4, p760-765, 6p |
| Database: |
Applied Science & Technology Source |
