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Bipolar Carrier Transport of GaOx via Doping and Defect Engineering for High‐Efficiency Silicon Heterojunction Solar Cells.

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Title: Bipolar Carrier Transport of GaOx via Doping and Defect Engineering for High‐Efficiency Silicon Heterojunction Solar Cells.
Authors: Wang, Jianqiao1, Zhou, Hang1, Ren, Penghui1, Guo, Daoyou1, dyguo@zstu.edu.cn, Wang, Yanhao2, Liu, Dan1, Li, Songyu1, Zhao, Di1, Cui, Can1, cancui@zstu.edu.cn, Zhang, Shan‐Ting2, Yu, Xuegong3, Li, Dongdong2, lidd@zjlab.ac.cn, Wang, Peng1, pengwang@zstu.edu.cn
Source: Advanced Functional Materials; Apr2026, Vol. 36 Issue 30, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192956256
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Bipolar Carrier Transport of GaOx via Doping and Defect Engineering for High‐Efficiency Silicon Heterojunction Solar Cells.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; Apr2026, Vol. 36 Issue 30, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192956256
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      – Type: doi
        Value: 10.1002/adfm.202521850
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      – Code: eng
        Text: English
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      – TitleFull: Bipolar Carrier Transport of GaOx via Doping and Defect Engineering for High‐Efficiency Silicon Heterojunction Solar Cells.
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            NameFull: Wang, Jianqiao
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            NameFull: Zhou, Hang
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            – D: 21
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
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