APA (7th ed.) Citation

Kim, H. J., Yang, H., Kim, H., Park, S., Lee, H., Choi, S., . . . Bae, J. (2026). Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics. Solid-State Electronics, 235, N.PAG. https://doi.org/10.1016/j.sse.2026.109358

Chicago Style (17th ed.) Citation

Kim, Hwan Jin, et al. "Analysis of Spatial Distribution of Remnant Polarization in Inverted Staggered A-IGZO/HZO Ferroelectric Thin-film Transistor Using Capacitance-voltage Characteristics." Solid-State Electronics 235 (2026): N.PAG. https://doi.org/10.1016/j.sse.2026.109358.

MLA (9th ed.) Citation

Kim, Hwan Jin, et al. "Analysis of Spatial Distribution of Remnant Polarization in Inverted Staggered A-IGZO/HZO Ferroelectric Thin-film Transistor Using Capacitance-voltage Characteristics." Solid-State Electronics, vol. 235, 2026, p. N.PAG, https://doi.org/10.1016/j.sse.2026.109358.