Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.

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Bibliographic Details
Title: Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.
Authors: Kim, Hwan Jin1, Yang, Hyojin1, Kim, Haesung2, Park, Sejun1, Lee, Ha-Neul1, Choi, Sung-Jin1, Kim, Dong Myong1, Kim, Dae Hwan1, Park, Min-Kyu1,3, mkpark@gachon.ac.kr, Bae, Jong-Ho1,4, jbae@yonsei.ac.kr
Source: Solid-State Electronics; Aug2026, Vol. 235, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/j.sse.2026.109358