Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.

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Title: Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.
Authors: Kim, Hwan Jin1, Yang, Hyojin1, Kim, Haesung2, Park, Sejun1, Lee, Ha-Neul1, Choi, Sung-Jin1, Kim, Dong Myong1, Kim, Dae Hwan1, Park, Min-Kyu1,3, mkpark@gachon.ac.kr, Bae, Jong-Ho1,4, jbae@yonsei.ac.kr
Source: Solid-State Electronics; Aug2026, Vol. 235, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193455574
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kim%2C+Hwan+Jin%22">Kim, Hwan Jin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Hyojin%22">Yang, Hyojin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Haesung%22">Kim, Haesung</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Park%2C+Sejun%22">Park, Sejun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Ha-Neul%22">Lee, Ha-Neul</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Sung-Jin%22">Choi, Sung-Jin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Dong+Myong%22">Kim, Dong Myong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Dae+Hwan%22">Kim, Dae Hwan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Park%2C+Min-Kyu%22">Park, Min-Kyu</searchLink><relatesTo>1,3</relatesTo>, <i>mkpark@gachon.ac.kr</i><br /><searchLink fieldCode="AU" term="%22Bae%2C+Jong-Ho%22">Bae, Jong-Ho</searchLink><relatesTo>1,4</relatesTo>, <i>jbae@yonsei.ac.kr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; Aug2026, Vol. 235, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193455574
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.sse.2026.109358
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Titles:
      – TitleFull: Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kim, Hwan Jin
      – PersonEntity:
          Name:
            NameFull: Yang, Hyojin
      – PersonEntity:
          Name:
            NameFull: Kim, Haesung
      – PersonEntity:
          Name:
            NameFull: Park, Sejun
      – PersonEntity:
          Name:
            NameFull: Lee, Ha-Neul
      – PersonEntity:
          Name:
            NameFull: Choi, Sung-Jin
      – PersonEntity:
          Name:
            NameFull: Kim, Dong Myong
      – PersonEntity:
          Name:
            NameFull: Kim, Dae Hwan
      – PersonEntity:
          Name:
            NameFull: Park, Min-Kyu
      – PersonEntity:
          Name:
            NameFull: Bae, Jong-Ho
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 00381101
          Numbering:
            – Type: volume
              Value: 235
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
ResultId 1