Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.
Saved in:
| Title: | Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device. |
|---|---|
| Authors: | SARKAR, DEBARATI1,2, MAJUMDAR, ANGSHUMAN1, BASAK, ARIGHNA1, arighnabsk060891@gmail.com |
| Source: | Journal of Active & Passive Electronic Devices; 2026, Vol. 20 Issue 2, p97-107, 11p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
|---|---|
| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 193535829 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22SARKAR%2C+DEBARATI%22">SARKAR, DEBARATI</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22MAJUMDAR%2C+ANGSHUMAN%22">MAJUMDAR, ANGSHUMAN</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22BASAK%2C+ARIGHNA%22">BASAK, ARIGHNA</searchLink><relatesTo>1</relatesTo>, <i>arighnabsk060891@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Active+%26+Passive+Electronic+Devices%22">Journal of Active & Passive Electronic Devices</searchLink>; 2026, Vol. 20 Issue 2, p97-107, 11p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193535829 |
| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 97 Titles: – TitleFull: Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: SARKAR, DEBARATI – PersonEntity: Name: NameFull: MAJUMDAR, ANGSHUMAN – PersonEntity: Name: NameFull: BASAK, ARIGHNA IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: 2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 15550281 Numbering: – Type: volume Value: 20 – Type: issue Value: 2 Titles: – TitleFull: Journal of Active & Passive Electronic Devices Type: main |
| ResultId | 1 |