Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.

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Title: Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.
Authors: SARKAR, DEBARATI1,2, MAJUMDAR, ANGSHUMAN1, BASAK, ARIGHNA1, arighnabsk060891@gmail.com
Source: Journal of Active & Passive Electronic Devices; 2026, Vol. 20 Issue 2, p97-107, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193535829
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.
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  Data: <searchLink fieldCode="AU" term="%22SARKAR%2C+DEBARATI%22">SARKAR, DEBARATI</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22MAJUMDAR%2C+ANGSHUMAN%22">MAJUMDAR, ANGSHUMAN</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22BASAK%2C+ARIGHNA%22">BASAK, ARIGHNA</searchLink><relatesTo>1</relatesTo>, <i>arighnabsk060891@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Active+%26+Passive+Electronic+Devices%22">Journal of Active & Passive Electronic Devices</searchLink>; 2026, Vol. 20 Issue 2, p97-107, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193535829
RecordInfo BibRecord:
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    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 97
    Titles:
      – TitleFull: Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.
        Type: main
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            NameFull: SARKAR, DEBARATI
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            NameFull: MAJUMDAR, ANGSHUMAN
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            NameFull: BASAK, ARIGHNA
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            – D: 01
              M: 04
              Text: 2026
              Type: published
              Y: 2026
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              Value: 20
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              Value: 2
          Titles:
            – TitleFull: Journal of Active & Passive Electronic Devices
              Type: main
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