Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device.
Saved in:
| Title: | Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device. |
|---|---|
| Authors: | SARKAR, DEBARATI1,2, MAJUMDAR, ANGSHUMAN1, BASAK, ARIGHNA1, arighnabsk060891@gmail.com |
| Source: | Journal of Active & Passive Electronic Devices; 2026, Vol. 20 Issue 2, p97-107, 11p |
| Database: | Applied Science & Technology Source |
Be the first to leave a comment!
