APA (7th ed.) Citation

Lu, H., Wang, Y., Sun, H., & Liu, J. (2026). Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing. Advanced Functional Materials, 36(40), 1. https://doi.org/10.1002/adfm.202525471

Chicago Style (17th ed.) Citation

Lu, Haoyue, Yan Wang, Hao Sun, and Jing Liu. "Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing." Advanced Functional Materials 36, no. 40 (2026): 1. https://doi.org/10.1002/adfm.202525471.

MLA (9th ed.) Citation

Lu, Haoyue, et al. "Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing." Advanced Functional Materials, vol. 36, no. 40, 2026, p. 1, https://doi.org/10.1002/adfm.202525471.