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Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing.

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Bibliographic Details
Title: Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing.
Authors: Lu, Haoyue1, Wang, Yan1, Sun, Hao2, Liu, Jing1, jingliu_1112@tju.edu.cn
Source: Advanced Functional Materials; 5/18/2026, Vol. 36 Issue 40, p1-10, 10p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194015241
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing.
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  Data: <searchLink fieldCode="AU" term="%22Lu%2C+Haoyue%22">Lu, Haoyue</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Yan%22">Wang, Yan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Hao%22">Sun, Hao</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Jing%22">Liu, Jing</searchLink><relatesTo>1</relatesTo>, <i>jingliu_1112@tju.edu.cn</i>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194015241
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1002/adfm.202525471
    Languages:
      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 1
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      – TitleFull: Dual‐Gate Ambipolar MoTe2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing.
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            NameFull: Lu, Haoyue
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            NameFull: Wang, Yan
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            NameFull: Sun, Hao
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            NameFull: Liu, Jing
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            – D: 18
              M: 05
              Text: 5/18/2026
              Type: published
              Y: 2026
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              Value: 36
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              Value: 40
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            – TitleFull: Advanced Functional Materials
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