Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process - Shima, Yukinori; Kurosaki, Daisuke; Jincho, Masami; Mashiyama, Mitsuo; Watanabe, Masahiro; Kumakura, Kayo; Yasumoto, Seiji; Dobashi, Masayoshi; Koezuka, Junichi; Saito, Motoharu; Kusunoki, Koji; Yamazaki, Shunpei (Journal of the Society for Information Display, 2026)