Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique.

Saved in:
Bibliographic Details
Title: Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique.
Authors: N., Praveena1,2, praveena_ec@sirmvit.edu, N., Shylashree3, shylashreen@rvce.edu.in
Source: Engineering, Technology & Applied Science Research; Apr2026, Vol. 16 Issue 2, p32955-32961, 7p
Database: Applied Science & Technology Source
FullText Links:
  – Type: pdflink
Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194189182
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22N%2E%2C+Praveena%22">N., Praveena</searchLink><relatesTo>1,2</relatesTo>, <i>praveena_ec@sirmvit.edu</i><br /><searchLink fieldCode="AU" term="%22N%2E%2C+Shylashree%22">N., Shylashree</searchLink><relatesTo>3</relatesTo>, <i>shylashreen@rvce.edu.in</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Engineering%2C+Technology+%26+Applied+Science+Research%22">Engineering, Technology & Applied Science Research</searchLink>; Apr2026, Vol. 16 Issue 2, p32955-32961, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194189182
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.48084/etasr.15183
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 32955
    Titles:
      – TitleFull: Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: N., Praveena
      – PersonEntity:
          Name:
            NameFull: N., Shylashree
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 22414487
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Engineering, Technology & Applied Science Research
              Type: main
ResultId 1