Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique.
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| Title: | Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique. |
|---|---|
| Authors: | N., Praveena1,2, praveena_ec@sirmvit.edu, N., Shylashree3, shylashreen@rvce.edu.in |
| Source: | Engineering, Technology & Applied Science Research; Apr2026, Vol. 16 Issue 2, p32955-32961, 7p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 194189182 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22N%2E%2C+Praveena%22">N., Praveena</searchLink><relatesTo>1,2</relatesTo>, <i>praveena_ec@sirmvit.edu</i><br /><searchLink fieldCode="AU" term="%22N%2E%2C+Shylashree%22">N., Shylashree</searchLink><relatesTo>3</relatesTo>, <i>shylashreen@rvce.edu.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Engineering%2C+Technology+%26+Applied+Science+Research%22">Engineering, Technology & Applied Science Research</searchLink>; Apr2026, Vol. 16 Issue 2, p32955-32961, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194189182 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.48084/etasr.15183 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 32955 Titles: – TitleFull: Low Power High Speed Finfet Dram Cell and 4x4 Array Design Using the Sleep Transistor Technique. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: N., Praveena – PersonEntity: Name: NameFull: N., Shylashree IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 22414487 Numbering: – Type: volume Value: 16 – Type: issue Value: 2 Titles: – TitleFull: Engineering, Technology & Applied Science Research Type: main |
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