Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models.

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Bibliographic Details
Title: Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models.
Authors: Fried, M., Lohner, T., Jároli, E.
Source: Journal of Applied Physics; September 15 1992, Vol. 72, p2197-2201, 5p
Database: Applied Science & Technology Source
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