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Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.

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Bibliographic Details
Title: Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy.
Authors: Rinaldi, R., Cingolani, R., Ferrara, M.
Source: Journal of Applied Physics; January 15 1993, Vol. 73, p898-904, 7p
Database: Applied Science & Technology Source
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