APA (7th ed.) Citation

Yasutake, K., Chen, Z., & Pang, S. K. (1994). Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface. Journal of Applied Physics, 75, 2048. https://doi.org/10.1063/1.356307

Chicago Style (17th ed.) Citation

Yasutake, K., Z. Chen, and S. K. Pang. "Modeling and Characterization of Interface State Parameters and Surface Recombination Velocity at Plasma Enhanced Chemical Vapor Deposited SiO2-Si Interface." Journal of Applied Physics 75 (1994): 2048. https://doi.org/10.1063/1.356307.

MLA (9th ed.) Citation

Yasutake, K., et al. "Modeling and Characterization of Interface State Parameters and Surface Recombination Velocity at Plasma Enhanced Chemical Vapor Deposited SiO2-Si Interface." Journal of Applied Physics, vol. 75, 1994, p. 2048, https://doi.org/10.1063/1.356307.