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Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface.

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Bibliographic Details
Title: Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface.
Authors: Yasutake, K., Chen, Z., Pang, S. K.
Source: Journal of Applied Physics; February 15 1994, Vol. 75, p2048-2054, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500225628
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface.
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  Data: <searchLink fieldCode="AU" term="%22Yasutake%2C+K%2E%22">Yasutake, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Chen%2C+Z%2E%22">Chen, Z.</searchLink><br /><searchLink fieldCode="AU" term="%22Pang%2C+S%2E+K%2E%22">Pang, S. K.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; February 15 1994, Vol. 75, p2048-2054, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500225628
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      – Type: doi
        Value: 10.1063/1.356307
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 2048
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      – TitleFull: Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface.
        Type: main
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            NameFull: Yasutake, K.
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            NameFull: Chen, Z.
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            NameFull: Pang, S. K.
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            – D: 15
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              Text: February 15 1994
              Type: published
              Y: 1994
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              Value: 75
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            – TitleFull: Journal of Applied Physics
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