Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface.
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| Title: | Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface. |
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| Authors: | Yasutake, K., Chen, Z., Pang, S. K. |
| Source: | Journal of Applied Physics; February 15 1994, Vol. 75, p2048-2054, 7p |
| Database: | Applied Science & Technology Source |
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