Robinson, H. G., Mao, D. H., & Williams, B. L. (1996). Modeling ion implantation of HgCdTe. Journal of Electronic Materials, 25, 1336. https://doi.org/10.1007/BF02655029
Chicago Style (17th ed.) CitationRobinson, H. G., D. H. Mao, and B. L. Williams. "Modeling Ion Implantation of HgCdTe." Journal of Electronic Materials 25 (1996): 1336. https://doi.org/10.1007/BF02655029.
MLA (9th ed.) CitationRobinson, H. G., et al. "Modeling Ion Implantation of HgCdTe." Journal of Electronic Materials, vol. 25, 1996, p. 1336, https://doi.org/10.1007/BF02655029.
Warning: These citations may not always be 100% accurate.