Modeling ion implantation of HgCdTe.
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| Title: | Modeling ion implantation of HgCdTe. |
|---|---|
| Authors: | Robinson, H. G., Mao, D. H., Williams, B. L. |
| Source: | Journal of Electronic Materials; August 1996, Vol. 25, p1336-1340, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 500347572 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Modeling ion implantation of HgCdTe. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Robinson%2C+H%2E+G%2E%22">Robinson, H. G.</searchLink><br /><searchLink fieldCode="AU" term="%22Mao%2C+D%2E+H%2E%22">Mao, D. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Williams%2C+B%2E+L%2E%22">Williams, B. L.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; August 1996, Vol. 25, p1336-1340, 5p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500347572 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/BF02655029 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1336 Titles: – TitleFull: Modeling ion implantation of HgCdTe. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Robinson, H. G. – PersonEntity: Name: NameFull: Mao, D. H. – PersonEntity: Name: NameFull: Williams, B. L. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: August 1996 Type: published Y: 1996 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 25 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
