Antoszewski, J., & Faraone, L. (1996). Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy. Journal of Applied Physics, 80, 3881. https://doi.org/10.1063/1.363344
Chicago Style (17th ed.) CitationAntoszewski, J., and L. Faraone. "Analysis of Magnetic Field Dependent Hall Data in Narrow Bandgap Hg1-xCdxTe Grown by Molecular Beam Epitaxy." Journal of Applied Physics 80 (1996): 3881. https://doi.org/10.1063/1.363344.
MLA (9th ed.) CitationAntoszewski, J., and L. Faraone. "Analysis of Magnetic Field Dependent Hall Data in Narrow Bandgap Hg1-xCdxTe Grown by Molecular Beam Epitaxy." Journal of Applied Physics, vol. 80, 1996, p. 3881, https://doi.org/10.1063/1.363344.
Warning: These citations may not always be 100% accurate.