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Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy.

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Bibliographic Details
Title: Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy.
Authors: Antoszewski, J., Faraone, L.
Source: Journal of Applied Physics; October 1 1996, Vol. 80, p3881-3892, 12p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; October 1 1996, Vol. 80, p3881-3892, 12p
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        Value: 10.1063/1.363344
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 3881
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      – TitleFull: Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy.
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            NameFull: Antoszewski, J.
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            NameFull: Faraone, L.
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              Text: October 1 1996
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              Y: 1996
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              Value: 80
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