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Mask-programmable multiple-valued logic gate using resonant tunnelling diodes.

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Title: Mask-programmable multiple-valued logic gate using resonant tunnelling diodes.
Authors: Chan, H. L. E., Bhattacharya, M., Mazumder, P.
Source: IEE Proceedings -- Circuits, Devices & Systems; October 1996, Vol. 143, p289-294, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500366006
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Mask-programmable multiple-valued logic gate using resonant tunnelling diodes.
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  Data: <searchLink fieldCode="AU" term="%22Chan%2C+H%2E+L%2E+E%2E%22">Chan, H. L. E.</searchLink><br /><searchLink fieldCode="AU" term="%22Bhattacharya%2C+M%2E%22">Bhattacharya, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Mazumder%2C+P%2E%22">Mazumder, P.</searchLink>
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        Value: 10.1049/ip-cds:19960571
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 289
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      – TitleFull: Mask-programmable multiple-valued logic gate using resonant tunnelling diodes.
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            NameFull: Chan, H. L. E.
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            NameFull: Bhattacharya, M.
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            NameFull: Mazumder, P.
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              Text: October 1996
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              Y: 1996
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              Value: 143
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