Kim, Y. K., Ha, T. S., & Yoon, J. K. (1998). Growth parameters on the defects formation in a grown silicon crystal. Journal of Materials Science, 33(18), 4627. https://doi.org/10.1023/A:1004489309683
Chicago Style (17th ed.) CitationKim, Young K., Tae S. Ha, and J. K. Yoon. "Growth Parameters on the Defects Formation in a Grown Silicon Crystal." Journal of Materials Science 33, no. 18 (1998): 4627. https://doi.org/10.1023/A:1004489309683.
MLA (9th ed.) CitationKim, Young K., et al. "Growth Parameters on the Defects Formation in a Grown Silicon Crystal." Journal of Materials Science, vol. 33, no. 18, 1998, p. 4627, https://doi.org/10.1023/A:1004489309683.
Warning: These citations may not always be 100% accurate.