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Growth parameters on the defects formation in a grown silicon crystal.

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Title: Growth parameters on the defects formation in a grown silicon crystal.
Authors: Kim, Young K., Ha, Tae S., Yoon, J. K.
Source: Journal of Materials Science; September 15 1998, Vol. 33 Issue 18, p4627-4632, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Growth parameters on the defects formation in a grown silicon crystal.
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  Data: <searchLink fieldCode="AU" term="%22Kim%2C+Young+K%2E%22">Kim, Young K.</searchLink><br /><searchLink fieldCode="AU" term="%22Ha%2C+Tae+S%2E%22">Ha, Tae S.</searchLink><br /><searchLink fieldCode="AU" term="%22Yoon%2C+J%2E+K%2E%22">Yoon, J. K.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; September 15 1998, Vol. 33 Issue 18, p4627-4632, 6p
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        Value: 10.1023/A:1004489309683
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 4627
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      – TitleFull: Growth parameters on the defects formation in a grown silicon crystal.
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            NameFull: Kim, Young K.
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              Text: September 15 1998
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              Y: 1998
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