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Device modeling of HgCdTe vertically integrated photodiodes.

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Title: Device modeling of HgCdTe vertically integrated photodiodes.
Authors: Mao, D. H., Robinson, H. G., Bartholomew, D. U.
Source: Journal of Electronic Materials; June 1997, Vol. 26, p678-682, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500459850
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Device modeling of HgCdTe vertically integrated photodiodes.
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  Data: <searchLink fieldCode="AU" term="%22Mao%2C+D%2E+H%2E%22">Mao, D. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Robinson%2C+H%2E+G%2E%22">Robinson, H. G.</searchLink><br /><searchLink fieldCode="AU" term="%22Bartholomew%2C+D%2E+U%2E%22">Bartholomew, D. U.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; June 1997, Vol. 26, p678-682, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500459850
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-997-0215-4
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 678
    Titles:
      – TitleFull: Device modeling of HgCdTe vertically integrated photodiodes.
        Type: main
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          Name:
            NameFull: Mao, D. H.
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            NameFull: Robinson, H. G.
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            NameFull: Bartholomew, D. U.
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            – D: 01
              M: 06
              Text: June 1997
              Type: published
              Y: 1997
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              Value: 03615235
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              Value: 26
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            – TitleFull: Journal of Electronic Materials
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