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Positron annihilation investigation of porous silicon heat treated to 1000 °C.

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Bibliographic Details
Title: Positron annihilation investigation of porous silicon heat treated to 1000 °C.
Authors: Dannefaer, S., Wiebe, C., Kerr, D.
Source: Journal of Applied Physics; December 15 1998, Vol. 84 Issue 12, p6559-6564, 6p
Database: Applied Science & Technology Source
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