APA (7th ed.) Citation

Lew, K. L., & Yoon, S. F. (2001). Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor. Journal of Applied Physics, 89(6), 3464. https://doi.org/10.1063/1.1343888

Chicago Style (17th ed.) Citation

Lew, K. L., and S. F. Yoon. "Model for InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistor." Journal of Applied Physics 89, no. 6 (2001): 3464. https://doi.org/10.1063/1.1343888.

MLA (9th ed.) Citation

Lew, K. L., and S. F. Yoon. "Model for InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistor." Journal of Applied Physics, vol. 89, no. 6, 2001, p. 3464, https://doi.org/10.1063/1.1343888.