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Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor.

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Title: Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor.
Authors: Lew, K. L., Yoon, S. F.
Source: Journal of Applied Physics; March 15 2001, Vol. 89 Issue 6, p3464-3468, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500711569
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor.
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        Value: 10.1063/1.1343888
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 3464
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      – TitleFull: Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor.
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            NameFull: Lew, K. L.
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              Text: March 15 2001
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              Y: 2001
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