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The coalescence of ELO layers of InxGa1-xAs grown on patterned (111) GaAs by liquid phase epitaxy.

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Title: The coalescence of ELO layers of InxGa1-xAs grown on patterned (111) GaAs by liquid phase epitaxy.
Authors: Iida, S., Balakrishnan, K., Koyama, T.
Source: Semiconductor Science & Technology; April 2001, Vol. 16 Issue 4, p209-215, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500715260
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: The coalescence of ELO layers of InxGa1-xAs grown on patterned (111) GaAs by liquid phase epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Iida%2C+S%2E%22">Iida, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Balakrishnan%2C+K%2E%22">Balakrishnan, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Koyama%2C+T%2E%22">Koyama, T.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; April 2001, Vol. 16 Issue 4, p209-215, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500715260
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 209
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      – TitleFull: The coalescence of ELO layers of InxGa1-xAs grown on patterned (111) GaAs by liquid phase epitaxy.
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            NameFull: Iida, S.
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            NameFull: Balakrishnan, K.
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            NameFull: Koyama, T.
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              Text: April 2001
              Type: published
              Y: 2001
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