APA (7th ed.) Citation

Remashan, K., Wong, N. A., & Chan, K. (2002). Modeling inversion-layer carrier mobilities in all regions of MOSFET operation. Solid-State Electronics, 46(1), 153. https://doi.org/10.1016/S0038-1101(01)00285-4

Chicago Style (17th ed.) Citation

Remashan, K., N. A. Wong, and K. Chan. "Modeling Inversion-layer Carrier Mobilities in All Regions of MOSFET Operation." Solid-State Electronics 46, no. 1 (2002): 153. https://doi.org/10.1016/S0038-1101(01)00285-4.

MLA (9th ed.) Citation

Remashan, K., et al. "Modeling Inversion-layer Carrier Mobilities in All Regions of MOSFET Operation." Solid-State Electronics, vol. 46, no. 1, 2002, p. 153, https://doi.org/10.1016/S0038-1101(01)00285-4.