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Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.

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Bibliographic Details
Title: Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.
Authors: Remashan, K., Wong, N. A., Chan, K.
Source: Solid-State Electronics; January 2002, Vol. 46 Issue 1, p153-156, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500848469
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; January 2002, Vol. 46 Issue 1, p153-156, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500848469
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/S0038-1101(01)00285-4
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 153
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      – TitleFull: Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.
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            NameFull: Remashan, K.
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            NameFull: Wong, N. A.
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              Text: January 2002
              Type: published
              Y: 2002
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              Value: 46
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