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Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.

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Bibliographic Details
Title: Modeling inversion-layer carrier mobilities in all regions of MOSFET operation.
Authors: Remashan, K., Wong, N. A., Chan, K.
Source: Solid-State Electronics; January 2002, Vol. 46 Issue 1, p153-156, 4p
Database: Applied Science & Technology Source
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