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A physics-based model for the substrate resistance of MOSFETs.

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Title: A physics-based model for the substrate resistance of MOSFETs.
Authors: Gao, X. F., Liou, J. J., Ortiz-Conde, A., Bernier, J., Croft, G.
Source: Solid-State Electronics; June 2002, Vol. 46 Issue 6, p853-857, 5p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500875649
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A physics-based model for the substrate resistance of MOSFETs.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; June 2002, Vol. 46 Issue 6, p853-857, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500875649
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/S0038-1101(01)00345-8
    Languages:
      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: A physics-based model for the substrate resistance of MOSFETs.
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            NameFull: Gao, X. F.
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            NameFull: Liou, J. J.
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            NameFull: Ortiz-Conde, A.
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            NameFull: Bernier, J.
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            NameFull: Croft, G.
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              Text: June 2002
              Type: published
              Y: 2002
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              Value: 00381101
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              Value: 46
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              Value: 6
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            – TitleFull: Solid-State Electronics
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