APA (7th ed.) Citation

Balakrishnan, K., Iida, s., & Kumagawa, M. (2002). Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE. Semiconductor Science & Technology, 17(7), 729. https://doi.org/10.1088/0268-1242/17/7/316

Chicago Style (17th ed.) Citation

Balakrishnan, K., s. Iida, and M. Kumagawa. "Study of the Formation Mechanism of InGaAs Pyramidal Layers on GaAs(100) Patterned Substrates by LPE." Semiconductor Science & Technology 17, no. 7 (2002): 729. https://doi.org/10.1088/0268-1242/17/7/316.

MLA (9th ed.) Citation

Balakrishnan, K., et al. "Study of the Formation Mechanism of InGaAs Pyramidal Layers on GaAs(100) Patterned Substrates by LPE." Semiconductor Science & Technology, vol. 17, no. 7, 2002, p. 729, https://doi.org/10.1088/0268-1242/17/7/316.