Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE.

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Bibliographic Details
Title: Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE.
Authors: Balakrishnan, K., Iida, s, Kumagawa, M.
Source: Semiconductor Science & Technology; July 2002, Vol. 17 Issue 7, p729-734, 6p
Database: Applied Science & Technology Source
Description
ISSN:02681242
DOI:10.1088/0268-1242/17/7/316