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Parasitic Channels in SiGe Heterojunction p-Metal Oxide Semiconductor Field Effect Transistors.

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Bibliographic Details
Title: Parasitic Channels in SiGe Heterojunction p-Metal Oxide Semiconductor Field Effect Transistors.
Authors: Hara, Y., Takagi, T., Inoue, A.
Source: Journal of the Electrochemical Society; July 2002, Vol. 149 Issue 7, pg394-g398, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500890984
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Parasitic Channels in SiGe Heterojunction p-Metal Oxide Semiconductor Field Effect Transistors.
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  Data: <searchLink fieldCode="AU" term="%22Hara%2C+Y%2E%22">Hara, Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Takagi%2C+T%2E%22">Takagi, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Inoue%2C+A%2E%22">Inoue, A.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; July 2002, Vol. 149 Issue 7, pg394-g398, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500890984
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1149/1.1481530
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: g394
    Titles:
      – TitleFull: Parasitic Channels in SiGe Heterojunction p-Metal Oxide Semiconductor Field Effect Transistors.
        Type: main
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          Name:
            NameFull: Hara, Y.
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            NameFull: Takagi, T.
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            NameFull: Inoue, A.
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            – D: 01
              M: 07
              Text: July 2002
              Type: published
              Y: 2002
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              Value: 149
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              Value: 7
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            – TitleFull: Journal of the Electrochemical Society
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