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Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier.

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Bibliographic Details
Title: Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier.
Authors: Shim, H. J., Hwang, I. J., Kim, K. S.
Source: Journal of Applied Physics; July 15 2002, Vol. 92 Issue 2, p1095-1098, 4p
Database: Applied Science & Technology Source
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