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Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers.

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Title: Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers.
Authors: Nigam, S., Kim, Jihyun, Luo, B.
Source: Journal of the Electrochemical Society; January 2003, Vol. 150 Issue 1, pG1-G5, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500972829
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers.
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        Value: 10.1149/1.1522387
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: G1
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      – TitleFull: Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers.
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            NameFull: Nigam, S.
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            NameFull: Kim, Jihyun
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            NameFull: Luo, B.
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            – D: 01
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              Text: January 2003
              Type: published
              Y: 2003
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              Value: 150
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