APA (7th ed.) Citation

Zhan, H. H., Nötzel, R., & Hamhuis, G. J. (2003). Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing. Journal of Applied Physics, 93(10), 5953. https://doi.org/10.1063/1.1566457

Chicago Style (17th ed.) Citation

Zhan, H. H., R. Nötzel, and G. J. Hamhuis. "Self-assembled InAs Quantum Dots Formed by Molecular Beam Epitaxy at Low Temperature and Postgrowth Annealing." Journal of Applied Physics 93, no. 10 (2003): 5953. https://doi.org/10.1063/1.1566457.

MLA (9th ed.) Citation

Zhan, H. H., et al. "Self-assembled InAs Quantum Dots Formed by Molecular Beam Epitaxy at Low Temperature and Postgrowth Annealing." Journal of Applied Physics, vol. 93, no. 10, 2003, p. 5953, https://doi.org/10.1063/1.1566457.