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Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.

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Bibliographic Details
Title: Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.
Authors: Zhan, H. H., Nötzel, R., Hamhuis, G. J.
Source: Journal of Applied Physics; May 15 2003 pt1, Vol. 93 Issue 10, p5953-5958, 6p
Database: Applied Science & Technology Source
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