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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors.

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Bibliographic Details
Title: Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors.
Authors: Luo, B., Ren, F., Allums, K. K.
Source: Solid-State Electronics; June 2003, Vol. 47 Issue 6, p1015-1020, 6p
Database: Applied Science & Technology Source
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