APA (7th ed.) Citation

Sun, C. L., Chen, S. Y., & Liao, C. C. (2004). Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics. Applied Physics Letters, 85(20), 4726. https://doi.org/10.1063/1.1814440

Chicago Style (17th ed.) Citation

Sun, C. L., S. Y. Chen, and C. C. Liao. "Low Voltage Lead Titanate/Si One-transistor Ferroelectric Memory with Good Device Characteristics." Applied Physics Letters 85, no. 20 (2004): 4726. https://doi.org/10.1063/1.1814440.

MLA (9th ed.) Citation

Sun, C. L., et al. "Low Voltage Lead Titanate/Si One-transistor Ferroelectric Memory with Good Device Characteristics." Applied Physics Letters, vol. 85, no. 20, 2004, p. 4726, https://doi.org/10.1063/1.1814440.