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Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics.

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Bibliographic Details
Title: Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics.
Authors: Sun, C. L., Chen, S. Y., Liao, C. C.
Source: Applied Physics Letters; 11/15/2004, Vol. 85 Issue 20, p4726-4728, 3p
Database: Applied Science & Technology Source
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