APA (7th ed.) Citation

Mane, A. U., Wenger, C., & Schroeder, T. (2005). A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3. Journal of the Electrochemical Society, 152(6), C399. https://doi.org/10.1149/1.1914751

Chicago Style (17th ed.) Citation

Mane, A. U., Ch Wenger, and T. Schroeder. "A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3." Journal of the Electrochemical Society 152, no. 6 (2005): C399. https://doi.org/10.1149/1.1914751.

MLA (9th ed.) Citation

Mane, A. U., et al. "A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3." Journal of the Electrochemical Society, vol. 152, no. 6, 2005, p. C399, https://doi.org/10.1149/1.1914751.