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A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3.

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Title: A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3.
Authors: Mane, A. U., Wenger, Ch, Schroeder, T.
Source: Journal of the Electrochemical Society; 2005, Vol. 152 Issue 6, pC399-C402, 4p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501085609
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3.
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  Data: <searchLink fieldCode="AU" term="%22Mane%2C+A%2E+U%2E%22">Mane, A. U.</searchLink><br /><searchLink fieldCode="AU" term="%22Wenger%2C+Ch%22">Wenger, Ch</searchLink><br /><searchLink fieldCode="AU" term="%22Schroeder%2C+T%2E%22">Schroeder, T.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; 2005, Vol. 152 Issue 6, pC399-C402, 4p
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        Value: 10.1149/1.1914751
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: C399
    Titles:
      – TitleFull: A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2-xTixO3.
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            NameFull: Mane, A. U.
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            NameFull: Wenger, Ch
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            NameFull: Schroeder, T.
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              Text: 2005
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              Value: 152
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