APA (7th ed.) Citation

Choi, S., Park, B., & Kim, H. (2006). Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer. Semiconductor Science & Technology, 21(3), 378. https://doi.org/10.1088/0268-1242/21/3/029

Chicago Style (17th ed.) Citation

Choi, Samjong, Byoungjun Park, and Hyunsuk Kim. "Capacitance-voltage Characterization of Ge-nanocrystal-embedded MOS Capacitors with a Capping Al2O3 Layer." Semiconductor Science & Technology 21, no. 3 (2006): 378. https://doi.org/10.1088/0268-1242/21/3/029.

MLA (9th ed.) Citation

Choi, Samjong, et al. "Capacitance-voltage Characterization of Ge-nanocrystal-embedded MOS Capacitors with a Capping Al2O3 Layer." Semiconductor Science & Technology, vol. 21, no. 3, 2006, p. 378, https://doi.org/10.1088/0268-1242/21/3/029.