Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.

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Bibliographic Details
Title: Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.
Authors: Choi, Samjong, Park, Byoungjun, Kim, Hyunsuk
Source: Semiconductor Science & Technology; Feb2006, Vol. 21 Issue 3, p378-381, 4p
Database: Applied Science & Technology Source
Description
ISSN:02681242
DOI:10.1088/0268-1242/21/3/029