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Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.

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Title: Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.
Authors: Choi, Samjong, Park, Byoungjun, Kim, Hyunsuk
Source: Semiconductor Science & Technology; Feb2006, Vol. 21 Issue 3, p378-381, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501223973
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.
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  Data: <searchLink fieldCode="AU" term="%22Choi%2C+Samjong%22">Choi, Samjong</searchLink><br /><searchLink fieldCode="AU" term="%22Park%2C+Byoungjun%22">Park, Byoungjun</searchLink><br /><searchLink fieldCode="AU" term="%22Kim%2C+Hyunsuk%22">Kim, Hyunsuk</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; Feb2006, Vol. 21 Issue 3, p378-381, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501223973
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/0268-1242/21/3/029
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 378
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      – TitleFull: Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer.
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            NameFull: Choi, Samjong
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            NameFull: Park, Byoungjun
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            NameFull: Kim, Hyunsuk
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              Text: Feb2006
              Type: published
              Y: 2006
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