Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric.
Saved in:
| Title: | Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric. |
|---|---|
| Authors: | Yeo, C. C., Cho, B. J., Lee, M. H. |
| Source: | Semiconductor Science & Technology; May 2006, Vol. 21 Issue 5, p665-669, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
|---|---|
| DOI: | 10.1088/0268-1242/21/5/017 |