Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric.

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Bibliographic Details
Title: Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric.
Authors: Yeo, C. C., Cho, B. J., Lee, M. H.
Source: Semiconductor Science & Technology; May 2006, Vol. 21 Issue 5, p665-669, 5p
Database: Applied Science & Technology Source
Description
ISSN:02681242
DOI:10.1088/0268-1242/21/5/017