APA (7th ed.) Citation

Hiramoto, T., Saitoh, M., & Tsutsui, G. (2006). Emerging nanoscale silicon devices taking advantage of nanostructure physics. IBM Journal of Research & Development, 50(4/5), 411. https://doi.org/10.1147/rd.504.0411

Chicago Style (17th ed.) Citation

Hiramoto, T., M. Saitoh, and G. Tsutsui. "Emerging Nanoscale Silicon Devices Taking Advantage of Nanostructure Physics." IBM Journal of Research & Development 50, no. 4/5 (2006): 411. https://doi.org/10.1147/rd.504.0411.

MLA (9th ed.) Citation

Hiramoto, T., et al. "Emerging Nanoscale Silicon Devices Taking Advantage of Nanostructure Physics." IBM Journal of Research & Development, vol. 50, no. 4/5, 2006, p. 411, https://doi.org/10.1147/rd.504.0411.